View ITF87012SVT_1257870.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ITF87012SVT
Data Sheet March 2000 File Number 4810.2
6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET Packaging
TSOP-6
Features
* Ultra Low On-Resistance - rDS(ON) = 0.035, VGS = 4.5V - rDS(ON) = 0.038, VGS = 4.0V - rDS(ON) = 0.045, VGS = 2.5V * * * * 2.5 V Gate Drive Capability Small Profile Package Gate to Source Protection Diode Simulation Models - Temperature Compensated PSPICETM and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.intersil.com
4 1 2 3
Symbol
DRAIN(1) DRAIN(2) DRAIN(6)
* Peak Current vs Pulse Width Curve * Transient Thermal Impedance Curve vs Board Mounting Area * Switching Time vs RGS Curves
DRAIN(5)
Ordering Information
GATE(3) SOURCE(4)
PART NUMBER ITF87012SVT
PACKAGE TSOP-6 (SC-95) 012
BRAND
NOTE: When ordering, use the entire part number. ITF87012SVT is available only in tape and reel.
Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified ITF87012SVT 20 20 12 6.0 5.5 3.5 3.0 Figure 4 2 16 -55 to 150 300 260 UNITS V V V A A A A A W mW/oC oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TA= 25oC, VGS = 4.5V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 25oC, VGS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 2.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25oC to 125oC. 2. 62.5oC/W measured using FR-4 board with 0.40 in2 (258.1 mm2) copper pad at 2 second.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures. SABER(c) is a Copyright of Analogy Inc., PSPICE(R) is a registered trademark of MicroSim Corporation. www.intersil.com or 321-724-7143 | Copyright (c) Intersil Corporation 2000
ITF87012SVT
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance VGS(TH) rDS(ON) VGS = VDS, ID = 250A (Figure 10) ID = 6.0A, VGS = 4.5V (Figures 8, 9) ID = 3.5A, VGS = 4.0V (Figure 8) ID = 3.0A, VGS = 2.5V (Figure 8) THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RJA Pad Area = 0.40 in2 (258.1 mm2) (Note 2) Pad Area = 0.0163 in2 (10.54 mm2) (Figure 20) Pad Area = 0.0056 in2 (3.60 mm2) (Figure 20) SWITCHING SPECIFICATIONS (VGS = 2.5V) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 2V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 10V, VGS = 0V, f = 1MHz (Figures 12 ) 655 227 118 pF pF pF Qg(TOT) Qg(2) Qg(TH) Qgs Qgd VGS = 0V to 4.5V VGS = 0V to 2V VGS = 0V to 0.5V VDD = 10V, ID = 5.5A, Ig(REF) = 1.0mA (Figures 13, 16, 17 ) 7.7 4.0 0.30 1.1 2.7 nC nC nC nC nC td(ON) tr td(OFF) tf VDD = 10V, ID = 6.0A VGS = 4.5V, RGS = 16 (Figures 15, 18, 19 ) 42 142 236 200 ns ns ns ns td(ON) tr td(OFF) tf VDD = 10V, ID = 3.0A VGS = 2.5V, RGS = 15 (Figures 14, 18, 19 ) 79 315 154 188 ns ns ns ns 62.5 198.2 218.4
oC/W oC/W oC/W
TA = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
BVDSS IDSS IGSS
ID = 250A, VGS = 0V (Figure 11) VDS = 20V, VGS = 0V VGS = 12V
20 -
-
10 10 1.5 0.035 0.038 0.045
V A uA
0.5 -
0.028 0.029 0.037
V
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL VSD trr QRR ISD = 5.5A ISD = 5.5A, dISD/dt = 50A/s ISD = 5.5A, dISD/dt = 50A/s TEST CONDITIONS MIN TYP 0.84 22 6.1 MAX UNITS V ns nC
2
ITF87012SVT Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) 8
ID, DRAIN CURRENT (A)
6
VGS = 4.5V, RJA = 62.5oC/W
4
2 VGS = 2.5V, RJA = 218.4oC/W
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE
3 1
THERMAL IMPEDANCE ZJA, NORMALIZED
DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM
RJA = 62.5oC/W
0.1
0.01
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-2 10-1 100 101 102 103
SINGLE PULSE 0.001 10-5 10-4 10-3
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
RJA = 62.5oC/W
IDM, PEAK CURRENT (A)
100 VGS = 4.5V VGS = 2.5V 10
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TA 125
1
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 102 103
10-5
FIGURE 4. PEAK CURRENT CAPABILITY
3
ITF87012SVT Typical Performance Curves
200 100 SINGLE PULSE TJ = MAX RATED TA = 25oC ID, DRAIN CURRENT (A) 100s
(Continued)
20
ID, DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V
15
10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 RJA = 62.5oC/W 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms 50
10
5
TJ = 150oC
TJ = 25oC TJ = -55oC
0 0.5 1.0 1.5 2.0 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3.0
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
20
100
VGS = 4.5V
ID, DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
VGS = 3V
15
rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m)
80 ID = 6A 60 ID = 3A 40
VGS = 2.5V
10 VGS = 2V 5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TA = 25oC 0 0 1.5 0.5 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 1.5V
20 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
1.6 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.4 VGS = 4.5V, ID = 6A NORMALIZED GATE THRESHOLD VOLTAGE
1.4 VGS = VDS, ID = 250A 1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160
0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
4
ITF87012SVT Typical Performance Curves
1.10
NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE
(Continued)
1500
ID = 250A 1000
C, CAPACITANCE (pF)
CISS = CGS + CGD
1.05
1.00
COSS CDS + CGD CRSS = CGD 100
0.95
0.90 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)
VGS = 0V, f = 1MHz 50 0.1 1.0 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 20
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 10V SWITCHING TIME (ns) 4
500 VGS = 2.5V, VDD = 10V, ID = 3.0A 400 tr
3
300 tf 200
2 WAVEFORMS IN DESCENDING ORDER: ID = 5.5A ID = 3A 0 2 4 6 Qg, GATE CHARGE (nC) 8 10
1
100 td(ON) 0 0 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE () 50 td(OFF)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
400 VGS = 4.5V, VDD = 10V, ID = 6A SWITCHING TIME (ns) 300
td(OFF)
tf 200 tr
100 td(ON) 0 0 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE () 50
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
5
ITF87012SVT Test Circuits and Waveforms
VDS RL VDD VDS VGS VGS = 4.5V
+
Qg(TOT)
VDD DUT Ig(REF) VGS VGS = 0.5V 0 Qg(TH) Qgs Ig(REF) 0
Qg(2) VGS = 2V
Qgd
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
tON RL VDS VGS VGS
+
tOFF td(OFF) tr tf 90%
td(ON) VDS
90%
0V RGS DUT 90% VGS 0 10% 50% PULSE WIDTH 50% 0 10% 10%
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. SWITCHING TIME WAVEFORM
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application's ambient temperature, TA (oC), and thermal resistance RJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.
( T JM - T A ) P DM = -----------------------------Z JA
1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air flow and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Intersil provides thermal information to assist the designer's preliminary application evaluation. Figure 20 defines the RJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power
(EQ. 1)
In using surface mount devices such as the TSOP-6 package, the environment in which it is applied will have a significant influence on the part's current and maximum power dissipation ratings. Precise determination of PDM is complex and influenced by many factors: 6
ITF87012SVT
with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Intersil device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. Displayed on the curve are RJA values listed in the Electrical Specifications table. The points were chosen to depict the compromise between the copper board area, the thermal resistance and ultimately the power dissipation, PDM. Thermal resistances corresponding to other copper areas can be obtained from Figure 20 or by calculation using Equation 2. RJA is defined as the natural log of the area times a coefficient added to a constant. The area, in square inches is the top copper area including the gate and source pads.
R JA = 120.6 - 18.9 ln ( Area ) (EQ. 2)
Copper pad area has no perceivable effect on transient thermal impedance for pulse widths less than 100ms. For pulse widths less than 100ms the transient thermal impedance is determined by the die and package. Therefore, CTHERM1 through CTHERM5 and RTHERM1 through RTHERM5 remain constant for each of the thermal models. A listing of the model component values is available in Table 1.
260 240 220 RJA (oC/W) 200 180 160 140 120 0.001 RJA = 120.6- 18.9*ln(AREA)
218.4oC/W - 0.0056in2 198.2oC/W - 0.0163in2
The transient thermal impedance (ZJA) is also effected by varied top copper board area. Figure 21 shows the effect of copper pad area on single pulse transient thermal impedance. Each trace represents a copper pad area in square inches corresponding to the descending list in the graph. Spice and SABER thermal models are provided for each of the listed pad areas.
0.01
0.1
1.0
AREA, TOP COPPER AREA (in2)
FIGURE 20. THERMAL RESISTANCE vs MOUNTING PAD AREA
200
160
ZJA, THERMAL IMPEDANCE (oC/W)
120
COPPER BOARD AREA - DESCENDING ORDER 0.02 in2 0.05 in2 0.10 in2 0.25 in2 0.40 in2
80
40
0 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) 102 103
FIGURE 21. THERMAL IMPEDANCE vs MOUNTING PAD AREA
7
ITF87012SVT PSPICE Electrical Model
.SUBCKT ITF87012SVT 2 1 3 ;
CA 12 8 11.00e-10 CB 15 14 9.50e-10 CIN 6 8 5.25e-10
LDRAIN
REV 25 Jan 2000
DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DESD1 91 9 DESD1MOD DESD1 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 27.41 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1
LGATE
DPLCAP 10 RSLC2
5 DBREAK RLDRAIN
DRAIN 2 RSLC1 51 ESLC 50 EBREAK
5 51
ESG + GATE 1 RLGATE DESD1 91 DESD2 CIN EVTEMP 9 RGATE + 18 22 20 6 8 EVTHRES + 19 8 6
IT 8 17 1 LDRAIN 2 5 1.00e-9 LGATE 1 9 1.04e-9 LSOURCE 3 7 1.29e-10 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD
MSTRO LSOURCE 8 RSOURCE RLSOURCE 7 SOURCE 3
RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 2.00e-3 RGATE 9 20 118 RLDRAIN 2 5 10 RLGATE 1 9 9 10.4 RLSOURCE 3 7 1.29 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 17.00e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
S1A 12 S1B CA 13 + EGS 6 8 13 8
S2A 14 13 S2B CB + EDS 5 8 14 IT 15 17
-
-
VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*175),2))} .MODEL DBODYMOD D (IS = 3.48e-11 IKF = 0.15 XT I= 0.18 RS = 1.47e-2 TRS1 = 1.25e-3 TRS2 = 0 CJO = 3.67e-10 TT = 2.20e-8 M = 0.52) .MODEL DBREAKMOD D (RS = 9.52e-2 TRS1 = 1.05e-3 TRS2 = 1.13e-6) .MODEL DESD1MOD D (BV = 8.2 Tbv1= -1.87e-3 N= 12 RS = 20) .MODEL DESD2MOD D (BV = 11.5 Tbv1= -2.01e-3 N= 8 RS = 20) .MODEL DPLCAPMOD D (CJO = 4.91e-10 IS = 1e-30 M = 0.59) .MODEL MMEDMOD NMOS (VTO = 1.10 KP = 2.60 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 118) .MODEL MSTROMOD NMOS (VTO = 1.29 KP = 58 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 0.86 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1180 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 7.58e-4 TC2 = -1.43e-6) .MODEL RDRAINMOD RES (TC1 = 2.21e-2 TC2 = 2.72e-5) .MODEL RSLCMOD RES (TC1 = 1.21e-3 TC2 = 1.00e-5) .MODEL RSOURCEMOD RES (TC1 = 1.00e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -2.01e-3 TC2 = -1.01e-6) .MODEL RVTEMPMOD RES (TC1 = -8.40e-4 TC2 = 0) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL S1BMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .MODEL S2BMOD VSWITCH (RON = 1e-5 .ENDS ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 VON = -3.5 VOFF= -3.0) VON = -3.0 VOFF= -3.5) VON = -1.5 VOFF= 0) VON = 0 VOFF= -1.5)
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
8
+
11 + 17 18
-
RDRAIN 16 21
DBODY
MWEAK
MMED
RBREAK 18 RVTEMP 19
VBAT +
8 22 RVTHRES
ITF87012SVT SABER Electrical Model
REV 25 Jan 2000 template ITF87012SVT n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (is = 3.48e-11,ikf = 0.15,xti = 0.18,rs = 1.47e-2,trs1 = 1.25e-3,trs2 = 0,cjo = 3.67e-10,tt = 2.20e-8,m = 0.52) dp..model dbreakmod = (rs = 9.52e-2,trs1 = 1.05e-3,trs2 = 1.13e-6) dp..model desd1mod = (bv = 8.2,tbv1 = -1.87e-3,n1 = 12,rs = 20) dp..model desd2mod = (bv = 11.5,tbv1 = -2.01e-3,n1 = 8,rs = 20) dp..model dplcapmod = (cjo = 4.91e-10,is = 1e-30,m = 0.59) m..model mmedmod = (type=_n, vto = 1.01,kp = 2.60,is = 1e-30,tox = 1) LDRAIN m..model mstrongmod = (type=_n, vto = 1.29, kp = 58, is = 1e-30, tox = 1) DPLCAP 5 m..model mweakmod = (type=_n, vto = 0.86, kp = 0.10, is = 1e-30, tox = 1) sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -3.5, voff = -3.0) 10 RLDRAIN sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3.0, voff = -3.5) RSLC1 sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = 0) 51 sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0, voff = -1.5) RSLC2 c.ca n12 n8 = 11.00e-10 c.cb n15 n14 = 9.50e-10 c.cin n6 n8 = 5.25e-10 dp.dbody n7 n71 = model=dbodymod dp.dbreak n72 n11 = model=dbreakmod dp.desd1 n91 n9 = model=desd1mod dp.desd2 n91 n7 = model=desd2mod GATE dp.dplcap n10 n5 = model=dplcapmod 1 i.it n8 n17 = 1 l.ldrain n2 n5 = 1.00e-9 l.lgate n1 n9 = 1.04e-9 l.lsource n3 n7 = 1.29e-10
ESG + EVTEMP RGATE + 18 22 9 20 RLGATE DESD1 91 DESD2 LGATE 6 MSTRO CIN 8 RSOURCE RLSOURCE S1A 12 13 8 S1B 13 + EGS 6 8 EDS S2A 14 13 S2B CB + 5 8 14 IT 15 17 RBREAK 18 RVTEMP 19 ISCL DBREAK 11 DBODY MWEAK MMED EBREAK + 17 18
DRAIN 2
6 8 EVTHRES + 19 8
50 RDRAIN 21 16
-
LSOURCE 7
SOURCE 3
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1 = 7.58e-4, tc2 = -1.43e-6 res.rdrain n50 n16 = 2.00e-3, tc1 = 2.21e-2, tc2 = 2.75e-5 CA res.rgate n9 n20 = 118 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 10.4 res.rlsource n3 n7 = 1.29 res.rslc1 n5 n51 = 1e-6, tc1 = 1.21e-3, tc2 = 1.00e-5 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 17.00e-3, tc1 = 1.00e-3, tc2 = 0 res.rvtemp n18 n19 = 1, tc1 = -8.40e-4, tc2 = 0 res.rvthres n22 n8 = 1, tc1 = -2.01e-3, tc2 = -1.01e-6 spe.ebreak n11 n7 n17 n18 = 27.41 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1
VBAT +
-
-
8 RVTHRES
22
equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/175))** 2)) } }
9
ITF87012SVT SPICE Thermal Model
REV 24 Jan 2000 ITF87012SVT Copper Area = 0.02 in2 CTHERM1 th 8 1.10e-3 CTHERM2 8 7 5.00e-3 CTHERM3 7 6 7.00e-3 CTHERM4 6 5 9.00e-3 CTHERM5 5 4 1.10e-2 CTHERM6 4 3 4.00e-2 CTHERM7 3 2 3.00e-1 CTHERM8 2 tl 1.50 RTHERM1 th 8 0.25 RTHERM2 8 7 0.60 RTHERM3 7 6 1.25 RTHERM4 6 5 8.00 RTHERM5 5 4 10.00 RTHERM6 4 3 43.00 RTHERM7 3 2 48.00 RTHERM8 2 tl 50.00
th JUNCTION
RTHERM1 8
CTHERM1
RTHERM2 7
CTHERM2
RTHERM3 6
CTHERM3
SABER Thermal Model
Copper Area = 0.02 in2 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 8 = 1.10e-3 ctherm.ctherm2 8 7 = 5.00e-3 ctherm.ctherm3 7 6 = 7.00e-3 ctherm.ctherm4 6 5 = 9.00e-3 ctherm.ctherm5 5 4 = 1.10e-2 ctherm.ctherm6 4 3 = 4.00e-2 ctherm.ctherm7 3 2 = 3.00e-1 ctherm.ctherm8 2 tl = 1.50 rtherm.rtherm1 th 8 = 0.25 rtherm.rtherm2 8 7 = 0.60 rtherm.rtherm3 7 6 = 1.25 rtherm.rtherm4 6 5 = 8.00 rtherm.rtherm5 5 4 = 10.00 rtherm.rtherm6 4 3 = 43.00 rtherm.rtherm7 3 2 = 48.00 rtherm.rtherm8 2 tl = 50.00 }
RTHERM4 5
CTHERM4
RTHERM5 4
CTHERM5
RTHERM6 3
CTHERM6
RTHERM7 2
CTHERM7
RTHERM8
CTHERM8
tl
CASE
TABLE 1. Thermal Models COMPONANT CTHERM6 CTHERM7 CTHERM8 RTHERM6 RTHERM7 RTHERM8 0.02 in2 4.00e-2 3.00e-1 1.50 43 48 50 0.05 in2 4.00e-2 3.50e-1 1.50 35 40 45 0.10 in2 4.20e-2 3.30e-1 1.50 35 37 42 0.25 in2 4.00e-2 3.00e-1 1.50 27 30 45 0.40 in2 4.00e-2 2.80e-1 1.50 27 29 37
10
ITF87012SVT MO-193AA (TSOP-6)
6 LEAD JEDEC MO-193AA TSOP PLASTIC PACKAGE (SIMILAR TO SSOTTM-6) INCHES
E E1 A 1
MILLIMETERS MIN 0.90 0.10 MAX 1.10 NOTES
SYMBOL A A1
6 e
MIN 0.035 0.004 0.012 0.003 0.107 0.103 0.056
MAX 0.043
b c
0.020 0.008 0.122 0.118 0.070
0.30 0.08 2.70 2.60 1.40
0.50 0.20 3.10 3.00 1.80 3 2
D b 4 3 L 0o-8o 0.037 0.95 0.075 1.90 0.024 0.60
D E E1
C
e L
0.004in 0.10mm
0.037 BSC 0.014 0.021
0.95 BSC 0.35 0.55 4
0.039 1.00
0.095 2.40
NOTES: 1. All dimensions are within the allowable dimensions of Rev. B of JEDEC MO-193AA outline dated 10-99. 2. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.006 inches (0.15mm) per side. 3. Dimension "E " does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 0.006 inches (0.15mm) per side. 4. "L" is the length of terminal for soldering. 5. Controlling dimension: Millimeter. 6. Revision 1 dated 2-00.
MO-193AA (TSOP-6)
8mm TAPE AND REEL
USER DIRECTION OF FEED 4.0mm 1.5mm DIAMETER HOLE 2.0mm C L 6.0mm 3.5mm 1.75mm
4.0mm COVER TAPE 17.0mm 13.0mm
178mm
60mm 13.0mm
GENERAL INFORMATION 1. 3000 PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS. SSOTTM-6 is a trademark of Fairchild Semiconductor.
11
ITF87012SVT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
12

▲Up To Search▲

Price & Availability of ITF87012SVT

	To Download ITF87012SVT Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .